dm t6015lfv document number: d s 38454 rev . 2 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information 60v n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) max i d max t c = + 25c 60v 16 m ? @ v gs = 10 v 35a 2 2 m ? @ v gs = 4.5 v 28a description and applications this mosfet is designed to minimize the on - stat e resistance (r ds(on) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? motor control ? dc - dc converters ? power management features and benefits ? low r ds(on) C ensures on - state l osses are minim ized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. gree n device (note 3 ) mechanical data ? case: p ower di ? 3333 - 8 (type ux) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see diagram ? terminals: finish C matte tin an nealed over copper leadfram e. solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t 6015 l f v - 7 p ower di 3333 - 8 (type ux) 2 , 0 00 /tape & reel dm t 6015 lf v - 13 p ower di 3333 - 8 (type ux) 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2 ) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those w hich contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information p ower di 3333 - 8 (type ux) t6v = product type marking code yyww = date code marking yy = last digit of year (ex: 1 6 = 201 6 ) ww = week code (01 ~ 53) t6v y yww t op view bottom view s s s g d d d d pin1 internal schematic powerdi is a registered trademark of diodes incorporated. d s g g ate protection diode
dm t6015lfv document number: d s 38454 rev . 2 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information maximu m ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 6 0 v gate - source voltage v gss 16 v continuous drain current (note 5 ) v gs = 10 v t a = + 25c t a = + 70c i d 9. 5 7. 6 a t c = + 25c t c = +10 0c i d 35 2 2 a pulsed drain curren t ( 10 s pulse , duty cycle = 1% ) i dm 60 a maximum continuous body diode f orward current (note 5 ) i s 2 a avalanche current , l = 0. 1 mh i as 1 0 a avalanche energ y, l = 0. 1 mh e as 5 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 2. 2 w t c = + 25 c 30 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 57 c/w t<10s 35 thermal resistance, junction to case (note 5 ) r j c 4.2 operating and storage temperature range t j, t stg - 55 to +150 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 6 0 gs = 0v, i d = 250 a zero gate voltage drain current i dss ds = 48 v, v gs = 0v gate - source leakage i gss gs = 16 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) 0.5 ds = v gs , i d = 250 a ds (on) ? gs = 10 v, i d = 10 a gs = 4.5 v, i d = 6 a diode forward voltage v sd gs = 0v, i s = 1 a dynamic characteristics (note 7 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 30 v, i d = 10 a total gate charge ( v gs = 10 v ) q g gs gd d(on) gs = 10 v , v ds = 30 v , r g = 6 ? d = 10 a turn - on rise time t r d(off) f rr ? ? f = 10 a, di/dt = 10 0a/ s body diode reverse recovery charge q rr ? ? notes: 5 . device mounted on fr - 4 substrate pc board, 2oz cop per, with thermal b ias to bottom layer 1 - inch square copper plate 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm t6015lfv document number: d s 38454 rev . 2 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 10v gs v = 4v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 0.01 0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.018 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 i = 10a d i = 6a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 6a d v = 10v gs i = 10a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm t6015lfv document number: d s 38454 rev . 2 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information 0.005 0.01 0.015 0.02 0.025 0.03 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 6a d v = 10v gs i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 2 4 6 8 10 0 4 8 12 16 20 v = 30v ds i = 10a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.01 0.1 1 10 100 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j (m ax ) t = 25c c v = 10v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm t6015lfv document number: d s 38454 rev . 2 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? ja ja r = 126c/w ? ja duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm t6015lfv document number: d s 38454 rev . 2 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information package o utline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi3333 - 8 (type ux) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi3333 - 8 (type ux) powerdi3333 - 8 (type ux) dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 d 3.20 3.40 3.30 d 1 2.95 3.15 3.05 d2 2.30 2.70 2.50 e 3.20 3.40 3.30 e1 2.95 3.15 3.05 e2 1.60 2.00 1.80 e2a 0.95 1.35 1.15 e2b 0.10 0.30 0.20 e 0.65 bsc k 0.50 0.90 0.70 l 0.30 0.50 0.40 0 12 10 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 x 0.420 x1 0.420 x2 2.370 y 0.700 y1 3 .700 y2 1.850 y3 2.250 d e e1 d1 a c l l e2b b e k d2 e2 a1 0 e2a x2 y1 x y c y2 y3 x1 g 1
dm t6015lfv document number: d s 38454 rev . 2 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated d mt6015lfv advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitnes s for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to t his document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applic ations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are repr esented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diode s incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein ma y also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of dio des incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any compo nent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the sa fety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated pr oducts in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporat ed and its represe ntatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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